Onye nnata IR 3162PT850D-A3

Kedu ihe dị iche n'etiti arụmọrụ nke photodiodes na phototransistors?

1. Phototransistor nwere ike na-ewere dị ka integrated Ọdịdị nke photodiode na transistor. Ihe e ji mara ya bụ mmepụta nke photodiode na njirimara transistor.
2. Photodiodes nwere ike iji dị ka voltaji ma ọ bụ isi iyi ugbu a (ie fotovoltaic cell) na-enweghị mgbakwunye ike.
3. Fototransistor ga-arụ ọrụ na ike mpụga, nke mere na ọ nwere ike ịpụta oke ugbu a karịa photodiode, n'ihi na transistor emewo ya.

- nha nke 3 mm IR site na oghere LED -

* Ikpe a dịkwa maka LED ndị ọzọ, dị ka: 5mm green site-hole LED, UV LED, 660nm LED, 940nm LED, 5mm blue through-hole LED, odo LED, amber LED ect *

- Na-arụ ọrụ site na oghere IR LED -

*E ji igwefoto see agba dị na foto a, biko were ezigbo agba na-agbapụta dị ka ọkọlọtọ.

- Site-oghere IR LED Parameter -

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Collector-Emitter Voltage	VCEO			30	V
Emitter-Collector Voltage	VECO			5	V
Collector Dark Current	ICEO			100	nA	VCE=20V Ee=0mw/cm2
Collector-Emitter Breakdown Voltage	Bvceo	30		100	V	ICBO=100uA Ee=0mw/cm2
Emitter-Collector Breakdown Voltage	Bvceo	6			V	IECO=10uA
Collector-Emitter Saturation Voltage	VCE(sat)			0.4	V	IC=2mA IB=100uA Ee=1mw/cm2
Photocurrent 1	IPCE	30		90	uA	Vce=5V Ee=1mw/cm2 λP=850nm
Photocurrent 2	IPCE	90		270	uA	VCE=5V Ee=1mw/cm2 λP=940nm
Current gain	hFE	270		900	uA	VCE=5V IC=2mA
Wavelenghth of Peak Sensitivity	λP		850		nm
Range of Spectral Bandwidth	λ0.5	400		1100	nm
Response Time-Rise Time	tR		15		us	Vce=5v Ic=1mA RL=1000Ω
Response Time-Fall Time	tF		15		us
Half Sensitivity angle	△λ		±10		deg
Collector-base Capacitance	CCB			8	PF	F=1MHz,VCB=3V

- njikọ waya ọla edo -

* Iji chekwaa ogologo ndụ LED ọ bụla, ụlọ ọrụ BestLED na-eji waya ọla edo dị elu maka njikọ sekit.

- Nkwakọ ngwaahịa IR LED -

* Anyị nwere ike ibukọ LED a na ọnụ ọgụgụ ọ bụla nke ngwugwu na teepu ma ọ bụ gbadaa pin LED dị ka ihe ị chọrọ.

- Ikanam infrared metụtara -

- Usoro mmepụta -

- T hrough-hole IR LED -