 Ngwaahịa> Onye nnata IR> 850nm IR Ikanam Emitter erite Mmakọ Obere Size

850nm IR Ikanam Emitter erite Mmakọ Obere Size

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Kpọtụrụ ugbu a

Ụdị Ụgwọ: T/T,Paypal,Western Union
Enweghi ike: FOB,EXW,FCA
Min. Nhazi: 5000 Piece/Pieces
Ụgbọ njem: Ocean,Land,Air
Port: SHENZHEN

Tụkwasịnụ Ikike & Ozi ndị ọzọ

Additional Information

Nkwakọ ngwaahịa: Igbe katọn

Ubu oke: 1000000000 pcs/week

Ụgbọ njem: Ocean,Land,Air

Ebe Mmalite: China

Inye Ike: 7000000000 pcs/week

Akwụkwọ: GB/T19001-2008/ISO9001:2008

Usoro HS: 8541401000

Port: SHENZHEN

Ụdị Ụgwọ: T/T,Paypal,Western Union

Enweghi ike: FOB,EXW,FCA

Njirimara Ngwaahịa

Ihe Nlereanya.: 1206PT850D &1206IRC-85L

Eke: Ikanam kacha mma

Nkwakọ ngwaahịa & nzipu

Ere Ngwa:	Piece/Pieces
Agedị ngwugwu:	Igbe katọn

Video Company

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Pịnye oghere oghere LED dị ka eriri ukwu

Nkọwapụta ngwaahịa

- Onye natara IR -

1206PT850D & 1206IRC-85L

E nwere ihe abụọ dị iche iche nke ikanam dị n'elu, nke ọcha bụ 850nm infrared LED emitter na nwa nke ya bụ onye natara IR nke ụdị nlele elu nke 850nm nke nwekwara ike ịkpọ aha 850nm foto diode. Na sekit ahụ, 850nm LED emitter na-ewepụta mgbaàmà ahụ wee nata onye nata IR ga-enweta ya. A, onye nnata IR ga-agbakọta dị ka oghere ojii ka ọ ga-enyocha ụfọdụ ọkụ anyị, nke nwere ike ijide n'aka na ọ nwere ike ịnweta mgbaàmà anyị chọrọ. Maka onye nata IR, enwere ụdị ọzọ maka ịhọrọ, dịka 3mm gbara gburugburu, 5mm gbara gburugburu, 3528 SMD LED ụdị ect.

1206 smd led

- Size: 2.0*1.25*0.8mm

- Chip Number: 1 chip

- Color: 850nm LED

- Type: Surface mount device

- Chip brand: Epistar

- Polarity Mark

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

-Akụkụ Dimension-

1206 smd ir 850nm size

1206 smd 850nm receiver size

Ihe ndị a SMD LED ahụ dịkwa maka IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Emitting Agba -

850nm IR LED 1206SMD

* Igwefoto na-ese agba dị na foto ahụ, biko were agba agba dị ka ọkọlọtọ.

- Ntọala eletriki -

Ọnụ ọgụgụ kachasị elu na Ta = 25 ℃

Parameter	Symbol	Rating
Power Dissipation	Pd	50mW
Pulse Forward Current	IFP	100mA
Forward Current	IF	30mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	2Years
Antistatic bag	Piece	3000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Njirimara Anya na Eletriki ( T c = 25 ℃ )

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.3		1.6	V	IF=30mA
Pulse Forward Voltage	VF		2.0		V	IFP=100mA
Radiant Intensity	IE	2.3		4.8	mw/sr	IF=30mA
Peak Wavelength	λP	845	850	858	nm	IF=30mA
Total Radiated Power	PO		3.2		mw	IF=30mA
Half Width	Dl		50		nm	IF=30mA
Viewing Half Angle	2q1/2		±70		deg	IF=30mA
Reverse Current	IR			5	uA	VR=5V
Rise Time	Tr		25		ns	IF=30mA
Fall Time	Tf		13		ns	IF=30mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

1206 smd erite

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Collector-Emitter Voltage	VCEO			30	V
Emitter-Collector Voltage	VECO			5	V
Collector Dark Current	ICEO			30	nA	VCE=20V Ee=0mw/cm2
Collector Dark Current	ICEO			150	uA	VCE=70V Ee=0mw/cm2
On State Collector Current	IC(on)		0.7	4	mA	Ee=1mw/cm2 Vce=5v
Collector-Emitter Breakdown Voltage	Bvceo	85			V	ICBO=100uA Ee=0mw/cm2
Emitter-Collector Breakdown Voltage	Bvceo	8.2			V	IECO=10uA
Collector-Emitter Saturation Voltage	VCE(sat)			0.3	V	IC=2mA IB=100uA Ee=1mw/cm2
Photocurrent 1	IPCE	300		400	uA	Vce=5V Ee=1mw/cm2 λP=850nm
Photocurrent 2	IPCE	500		600	uA	VCE=5V Ee=1mw/cm2 λP=940nm
Current gain	hFE	200		3000	uA	VCE=5V IC=2mA
Wavelenghth of Peak Sensitivity	λP		850		nm
Range of Spectral Bandwidth	λ0.5	700		1100	nm
Response Time-Rise Time	tR		15		us	Vce=5v Ic=1mA RL=1000Ω
Response Time-Fall Time	tF		15		us	Vce=5v Ic=1mA RL=1000Ω
Half Sensitivity angle	△λ		±10		deg
Collector-base Capacitance	CCB			8	PF	F=1MHz,VCB=3V

- Njikọ ọla edo ọla edo -

* Iji mee ka onye ọ bụla n'ime ogologo ndụ ọkụ, ụlọ ọrụ BestLED jiri waya ọla edo dị elu maka njikọ njikọ

- Mbukota -

* Anyị na-agbakọ ya na ngwongwo agụụ mgbe teepu ya dị ka eriri

- Ngwa -

- Ikanam njikọ -

- Mmepụta -

- Jiri -

SMD LED Use of attention

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 Ngwaahịa> Onye nnata IR> 850nm IR Ikanam Emitter erite Mmakọ Obere Size